![]() ![]() Multibit single cell memory element having tapered contactĮlectrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefromĬongruent state changeable optical memory material and deviceĭata storage medium incorporating a transition metal for increased switching speedĭata storage device including a phase changeable materialġ. Universal memory element and method of programming sameĬomposite memory material comprising a mixture of phase-change memory material and dielectric material Optical recording media having increased erasability Universal memory element with systems employing same and apparatus and method for reading, writing and programming same An apparatus for forming patterns of marks included in the instant element is also provided. By controlling the size, shape, spacing, symmetry and distribution of marks, crystallinity gradients of various strengths in one or more directions may be formed to provide phase tapers that effect the engineering of wavefronts. ![]() In a preferred embodiment, a pattern of amorphous marks is formed within a crystalline matrix of phase change material. The instant element may provide non-specular reflection, beam steering, focusing, defocusing, symmetrical and asymmetrical cross section effects, and wavefront correction. An incident wavefront of electromagnetic radiation interacts with the instant element and is reradiated with controlled propagation characteristics imposed by the stored phase taper. The phase taper provides control of the phase angle of reflected or reradiated electromagnetic radiation. By forming a gradient in crystallinity, a phase taper may be stored in the phase change material of the instant element. The element includes a phase change material that may be reversibly transformed between its crystalline and amorphous states. A reconfigurable and stationary element for the engineering of the wavefront of electromagnetic radiation. ![]()
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